• 姓名: 范志强
  • 职称: 教授
  • 学位: 博士
  • 长沙理工大学
  • 物理与电子科学学院

范志强,男,1982年出生,中共党员,博士(后),教授,博士生导师,湖南省121创新人才工程第三层次人选,长沙理工大学“湖湘学者”青年英才I类岗人选,湖南省普通高校青年骨干教师,湖南省物理学会理事。2010年毕业于湖南大学物理与微电子科学学院凝聚态物理专业,获得博士学位。

科研概况:主持完成国家自然科学基金2项,中国博士后基金1项,湖南省自然科学基金2项,湖南省教育厅基金2项。目前主持在研国家自然科学基金面上项目2项,湖南省自然科学基金1项,湖南省教育厅基金1项。2017年和2020年分别获得湖南省自然科学二等奖2项(排名第5和第4)。指导2名研究生获得湖南省研究生创新项目,国家奖学金。

研究方向:二维材料场效应器件的计算设计与性能调控;纳米器件的计算模拟与机理探索。每年计划招收博士生1名,硕士生2名。

联系方式:fan0221@163.com; zqfan@csust.edu.cn.

学术论文:在Nat. Commun., Carbon, Phys. Chem. Chem. Phys., J. Phys. Chem. C, Phys. Rev. B, Appl. Phys. Lett., Org. Electron.,等国际著名SCI刊物上发表第一作者或通讯作者论文50余篇。JCR一区二区代表性论文列表如下:

[28] Xing-Qian Cui, Qian Liu, Zhi-Qiang Fan( 通讯作者 ), Zhen-Hua Zhang, Tuning spin filtering and spin rectifying behaviors of zigzag silicon carbon nanoribbons by edge dual-hydrogenation, Org. Electron., 2020, 84: 105808.

[27] Hai-Qing Xie , Jie-Ying Li, Gang Liu, Xi-Ya Cai, Zhi-Qiang Fan( 通讯作者 ), Impact of Gate–Source/Drain Underlap on the Performance of Monolayer SiC Schottky-Barrier Field-Effect Transistor, IEEE Trans. Electron Devices, 2020, 67: 4130.

[26] Hai-Qing Xie , Jie-Ying Li, Gang Liu, Xi-Ya Cai, Zhi-Qiang Fan( 通讯作者 ), High-Performance Schottky-Barrier Field-Effect Transistors Based on Monolayer

SiC Contacting Different Metals, IEEE Trans. Electron Devices, 2019, 66: 5111.

[25] Wei-Yu Sun, Xing-Qian Cui, Zhi-Qiang Fan( 通讯作者 ), Liu-Ying Nie, Zhen-Hua Zhang, Effects of width and relative position of electrode on transport properties of spintronic nanodevice, J. Phys. D: Appl. Phys., 2019, 52: 155102.

[24] Zhi-Qiang Fan, Xiang-Wei Jiang, Jiezhi Chen, Jun-Wei Luo, Improving Performances of In-Plane Transition-Metal Dichalcogenide Schottky Barrier Field-Effect Transistors, ACS Appl. Mater. Interfaces, 2018, 10: 19271-19277.

[23] Zhi-Qiang Fan, Jiezhi Chen, Xiangwei Jiang, Electrical contacts and tunable rectifiations in monolayer GeSe-metal junctions, J. Phys. D: Appl. Phys., 2018, 51: 335104.

[22] Juan Lu,  Zhi-Qiang Fan( 通讯作者 ), Jian Gong, Jie-Zhi Chen, Huhe ManduLa, Yan-Yang Zhang, Shen-Yuan Yang, Xiang-Wei Jiang, Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects, Phys. Chem. Chem. Phys., 2018, 20: 5699-5707.

[21] Xiao-Xi Li,  Zhi-Qiang Fan ( 理论作者 ), Pei-Zhi Liu, Mao-Lin Chen, Xin Liu, Chuan-Kun Jia, Dong-Ming Sun, Xiang-Wei Jiang, Zheng Han, Vincent Bouchia, Jun-Jie Guo, Jian-Hao Chen, Zhi-Dong Zhang, Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor,  Nat. Commun., 2017, 8:970.

[20] Juan Lu, Zhi-Qiang Fan( 通讯作者 ), Jian Gong, Xiang-Wei Jiang, Ab initio performance predictions of single-layer In-V tunnel field-effect transistors, Phys. Chem. Chem. Phys., 2017, 19: 20121-20126.

[19]  Zhi-Qiang Fan, Xiang-Wei Jiang, Jun-Wei Luo, Li-Ying Jiao, Ru Huang, Shu-Shen Li, Lin-Wang Wang, In-plane Schottky-barrier field-effect transistors based on 1T/2H heterojunctions of transition-metal dichalcogenides,  Phys. Rev. B, 2017, 96: 165402.

[18]  Zhi-Qiang Fan, Xiang-Wei Jiang, Zhongming Wei, Jun-Wei Luo, Shu-Shen Li, Tunable Electronic Structures of GeSe Nanosheets and Nanoribbons,  J. Phys. Chem. C, 2017, 121: 14373-14379.

[17] Zhi-Qiang Fan, Wei-Yu Sun, Xiang-Wei Jiang, Jun-Wei Luo, Shu-Shen Li, Two dimensional Schottky contact structure based on in-plane zigzag phosphorene nanoribbon, Org. Electron., 2017, 44: 20-24.

[16] Zhi-Qiang Fan ( 通讯作者 ), Wei-Yu Sun, Zhen-Hua Zhang, Xiao-Qing Deng, Gui-Ping Tang, Hai-Qing Xie, Symmetry dependent spin transport properties of a single phenalenyl or pyrene molecular device, Carbon, 2017, 122: 687-693.

[15] Zhi-Qiang Fan, Wei-Yu Sun, Xiang-Wei Jiang, Zhen-Hua Zhang, Xiao-Qing Deng, Gui-Ping Tang, Hai-Qing Xie, Meng-Qiu Long, Redox control of magnetic transport properties of a single anthraquinone molecule with different contacted geometries, Carbon, 2017, 113: 18-25.

[14] Fang Xie, Zhi-Qiang Fan( 通讯作者 ), Ke-Qiu Chen, Xiao-Jiao Zhang, Meng-Qiu Long, Influence of anchoring groups on single-molecular junction conductance: Theoretical comparative study of thiol and amine, Org. Electron., 2017, 50: 198-203.

[13] Fang Xie, Zhi-Qiang Fan( 通讯作者 ), Xiao-Jiao Zhang, Jian-Ping Liu, Hai-Yan Wang, Kun Liu, Ji-Hai Yu, Meng-Qiu Long, Tuning of the electronic and transport properties of phosphorene nanoribbons by edge types and edge defects, Org. Electron., 2017, 42: 21-27.

[12] Fang Xie, Zhi-Qiang Fan( 通讯作者 ), Xiao-Jiao Zhang, Jian-Ping Liu, Hai-Yan Wang, Kun Liu, Ji-Hai Yu, Meng-Qiu Long, Tuning the I-V characteristic of a cruciform diamine molecular device by connected position and B/N doping, Org. Electron., 2017, 48: 1-6.

[11] Zhi-Qiang Fan, Fang Xie, Xiang-Wei Jiang, Zhong-Ming Wei, Shu-Shen Li, Giant decreasing of spin current in a single molecular junction with twisted zigzag graphene nanoribbon electrodes, Carbon, 2016, 110: 200-206.

[10] Zhi-Qiang Fan( 通讯作者 ), Zhen-Hua Zhang, Xiao-Qing Deng, Gui-Ping Tang, Chang-Hu Yang, Lin Sun, Hua-Li Zhu, Effect of electrode twisting on electronic transport properties of atomic carbon wires, Carbon, 2016, 98: 179-186.

[9] Zhi-Qiang Fan( 通讯作者 ), Zhen-Hua Zhang, Fang Xie, Xiao-Qing Deng, Gui-Ping Tang, Chang-Hu Yang, Ke-Qiu Chen, Reversible switching in gold-atom-organic-molecule complex induced by reversible bond formation, Org. Electron., 2015, 18: 101-106.

[8] Fang Xie, Zhi-Qiang Fan( 通讯作者 ), Kun Liu, Hai-Yan Wang, Ji-Hai Yu, Ke-Qiu Chen, Negative differential resistance and stable conductance switching behaviors of salicylideneaniline molecular devices sandwiched between armchair graphene nanoribbon electrodes, Org. Electron., 2015, 27: 41-45.

[7] Zhi-Qiang Fan, Ke-Qiu Chen, Stable Two-Dimensional Conductance Switch of Polyaniline Molecule Connecting to Graphene Nanoribbons, Sci. Rep.,2014, 4: 5976.

[6] Zhi-Qiang Fan( 通讯作者 ), Zhen-Hua Zhang, Wen Tian, Xiao-Qing Deng, Gui-Ping Tang, Xie Fang, Altering regularities on resistances of doped Au-alkanedithiol-Au junctions, Org. Electron., 2013, 14: 2705-2710.

[5] Zhi-Qiang Fan( 通讯作者 ), Zhen-Hua Zhang, Xiao-Qing Deng, Gui-Ping Tang, Ke-Qiu Chen, Controllable low-bias negative differential resistance and rectifying behaviors induced by symmetry breaking, Appl. Phys. Lett., 2013, 102: 023508.

[4] Zhi-Qiang Fan( 通讯作者 ), Zhen-Hua Zhang, Xiao-Qing Deng, Gui-Ping Tang, Ke-Qiu Chen, Reversible switching in an N-salicylideneaniline molecular device induced by hydrogen transfer, Org. Electron., 2012, 13: 2954-2958.

[3] Zhi-Qiang Fan( 通讯作者 ), Zhen-Hua Zhang, Ming Qiu, Xiao-Qing Deng, Gui-Ping Tang, The site effects of B or N doping on I-V characteristics of a single pyrene molecular device, Appl. Phys. Lett., 2012, 101: 073104.

[2] Zhi-Qiang Fan, Ke-Qiu Chen, Negative differential resistance and rectifying behaviors in phenalenyl molecular device with different contact geometries, Appl. Phys. Lett., 2010, 96: 053509.

[1] Zhi-Qiang Fan, Ke-Qiu Chen, Qing Wan, Bing-Suo Zou, Wen-Hui Duan, Z. Shuai, Theoretical investigation of the negative differential resistance in squashed C60 molecular device, Appl. Phys. Lett., 2008, 92: 263304.